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Trench T2 TM
Power MOSFET
IXTA200N055T2
IXTP200N055T2
V DSS
I D25
R DS(on)
= 55V
= 200A
≤ 4.2m Ω
N-Channel Enhancement Mode
Avalanche Rated
TO-263 (IXTA)
Symbol
V DSS
Test Conditions
T J = 25 ° C to 175 ° C
Maximum Ratings
55
V
G
S
(TAB)
V DGR
V GSM
I D25
I LRMS
T J = 25 ° C to 175 ° C, R GS = 1M Ω
Transient
T C = 25 ° C
Lead Current Limit, RMS
55
± 20
200
75
V
V
A
A
TO-220 (IXTP)
I DM
I AR
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
500
100
A
A
G
D
S
(TAB)
E AS
P D
T J
T JM
T C = 25 ° C
T C = 25 ° C
600
360
-55 ... +175
175
mJ
W
° C
° C
G = Gate
S = Source
Features
D = Drain
TAB = Drain
T stg
T L
T sold
M d
Weight
1.6mm (0.062in.) from case for 10s
Plastic body for 10 seconds
Mounting torque (TO-220)
TO-263
TO-220
-55 ... +175
300
260
1.13 / 10
2.5
3.0
° C
° C
° C
Nm/lb.in.
g
g
International standard packages
Unclamped Inductive Switching
(UIS) rated
Low package inductance
175°C Operating Temperature
High current handling capability
ROHS Compliant
High performance Trench
Technology for extremely low R DS(on)
Advantages
Symbol Test Conditions
(T J = 25 ° C unless otherwise specified)
BV DSS V GS = 0V, I D = 250 μ A
Characteristic Values
Min. Typ. Max.
55 V
Easy to mount
Space savings
High power density
Synchronous
V GS(th)
I GSS
V DS = V GS , I D = 250 μ A
V GS = ± 20V, V DS = 0V
2.0
4.0
± 200
V
nA
Applications
I DSS
V DS = V DSS
V GS = 0V
T J = 150 ° C
5 μ A
50 μ A
Automotive Engine Control
Synchronous Buck Converter
(for notebook systempower & General
R DS(on)
V GS = 10V, I D = 50A, Notes 1, 2
3.3
4.2 m Ω
purpose point & load.)
DC/DC Converters
High Current Switching Applications
Power Train Management
Distributed Power Architecture
? 2008 IXYS CORPORATION, All rights reserved
DS99919B(3/08)
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